Room-temperature wafer bonding of silicon and lithium niobate by means of argon-beam surface activation

Integrated Ferroelectrics

Volumn 50, Issue , 2002, Pages 53-59

  Takagi, H ^a   Maeda, R ^a   Suga, T ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Argon beam; Lithium niobate; Room temperature bonding; Silicon; Surface activation; Wafer bonding

Indexed keywords

ARGON; ETCHING; LITHIUM NIOBATE; PIEZOELECTRIC MATERIALS;

ARGON BEAM; ROOM TEMPERATURE BONDING; SURFACE ACTIVATION; WAFER BONDING;

SILICON WAFERS;

EID: 27144447318     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580215523     Document Type: Article

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