Temperature dependence of the inelastic scattering in a GaAs/n-AlGaAs selectively doped heterojunction with InGaAs quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 29, Issue 3-4, 2005, Pages 593-596

  Kawazu, T ^a   Sakaki, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Inelastic scattering; InGaAs; Quantum dot; Single heterostructure; Two dimensional electron

Indexed keywords

MAGNETORESISTANCE; SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

ELECTRON POPULATIONS; INELASTIC SCATTERING;

HETEROJUNCTIONS;

EID: 26944435869     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.06.034     Document Type: Conference Paper

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