Transport properties of two-dimensional electron gases in Ga[Al]As heterostructures containing InAs self-assembled quantum dots

Microelectronic Engineering

Volumn 47, Issue 1, 1999, Pages 73-75

  Ribeiro, E ^a   Jaggi R ^a   Heinzel, T ^a   Ensslin, K ^a   Medeiros Ribeiro, T G ^b   Petroff, P M ^b  

^a ETH ZURICH   (Switzerland)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON GAS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TWO DIMENSIONAL;

HETEROINTERFACE; METAL INSULATOR TRANSITION; TWO DIMENSIONAL ELECTRON GASES;

HETEROJUNCTIONS;

EID: 0345504806     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00152-5     Document Type: Article

References (7)

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