Electron scattering in GaAs/n-AlGaAs selectively doped heterojunctions with charged and neutral InGaAs quantum dots

Physica Status Solidi C: Conferences

Volumn , Issue 4, 2003, Pages 1325-1328

  Kawazu, T ^a   Noda, T ^a   Sakaki, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; GATE VOLTAGES; HALL MEASUREMENTS; INGAAS DOT; INGAAS QUANTUM DOTS; QUANTUM LIFETIMES; SCATTERING POTENTIALS; SCATTERING PROCESS;

ALUMINUM GALLIUM ARSENIDE; HETEROJUNCTIONS; SCATTERING; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84875117191     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303082     Document Type: Conference Paper

References (13)

1. G. Yusa and H. Sakaki, Electron. Lett. 32, 491 (1996).
2. G. Yusa and H. Sakaki, Appl. Phys. Lett. 70, 345 (1997).
3. S.-W. Lee, K. Hirakawa, and Y. Shimada, Appl. Phys. Lett. 75, 1428 (1999).
4. H. Sakaki, G. Yusa, T. Someya, Y. Ohno, T. Noda, H. Akiyama, Y. Kodaya, and H. Noge, Appl. Phys. Lett. 67, 3444 (1995).
5. E. Ribeiro, E. Muller, T. Heinzel, H. Auderset, and K. Ensslin, Phys. Rev. 58, 1506 (1998).
6. L. P. Sadwick and K. L. Wang, IEEE Trans. Electron Devices 33, 650 (1986).
7. T. Kawazu, T. Noda, and H. Sakaki, Proc. 28th Internat. Symp. Compound Semicond. Inst. Phys. Conf. Ser. No. 170, 375 (2002).
8. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
9. K. Hirakawa and H. Sakaki, Phys. Rev. 33, 8291 (1986).
10. H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, and T. Matsusue, Appl. Phys. Lett. 51, 1934 (1987).
11. J. P. Harrang, R. J. Higgins, and R. K. Goodall, Phys. Rev. B 32, 8126 (1984).
12. F. F. Fang, T. P. Smith, and S. L. Wright, Surf. Sci. 196, 310 (1988).
13. P. T. Coleridge, R. Stoner, and R. Fletcher, Phys. Rev. B 39, 1120 (1989).