Fabrication and characterization of novel oxide-free InP metal-insulator-semiconductor FETs having an ultra narrow Si surface quantum well

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2439-2443

  Yamada, Masatsugu ^a   Takahashi, Hiroshi ^a   Hashizume, Tamotsu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

ECR; InP; MISFET; Nitrogen plasma; Passivation; Si ICL; Silicon nitride

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NITRIDING; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; SILICON NITRIDE; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

NOVEL OXIDE FREE INDIUMPHOSPHIDE; PARTIAL NITRADATION; ULTRA NARROW SILICON SURFACE QUANTUM WELL; ULTRAHIGH VACUUM;

MISFET DEVICES;

EID: 0033692006     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2439     Document Type: Article

References (14)

1. H. Ishii, H. Hasegawa, A. Ishii and H. Ohno: Appl. Surf. Sci. 41/42 (1989) 390.
2. F. Plais, B. Agius, N. Proust, S. Cassette, G. Ravel and M. Puech: Appl. Phys. Lett. 59 (1991) 837.
3. Y. Z. Hu, M. Li, Y. Wang, E. A. Irene, M. Rowe and H. C. Casey, Jr.: Appl. Phys. Lett. 63 (1993) 1113.
4. Y. H. Jeong, S. Takagi, F. Arai and T. Sugano: J. Appl. Phys. 62 (1987) 2370.
5. R. W. M. Kwok, W. M. Lau, S. Ingrey and D. Landheer: J. Vac. Sci. & Technol. A10 (1992) 754.
6. H. Takahashi, T. Hashizume and H. Hasegawa: Appl. Surf. Sci. 123/124 (1998) 615.
7. H. Hasegawa, M. Aakazawa, K. Matsuzaki, H. Ishii and H. Ohno: Jpn. J. Appl. Phys. 27 (1988) L2265.
8. H. Takahashi, T. Hashizume and H. Hasegawa: Jpn. J. Appl. Phys. 38 (1999) 1128.
9. C. G. Van de Walle: Phys. Rev. B 39 (1989) 1871.
10. N. Tsurumi, Y. Ishikawa, T. Fukui and H. Hasegawa: Jpn. J. Appl. Phys. 37 (1998) 1501.
11. M. Pelavin, D. N. Hendrickson, J. M. Hollander and W. L. Jolly: J. Phys. Chem. 74 (1970) 1116.
12. Y. Matsumoto, T. Suzuki, K. Haga, H. Sasaki, M. Sakuma, T. Hanajiri, T. Sugano and T. Katoda: Proc. 7th Int. Conf. Indium Phosphide and Related Materials (1995) p. 609.
13. M. Losurdo, P. Capezzuto, G. Bruno, G. Leo and E. A. Irene: J. Vac. Sci. & Technol. A 17 (1999) 2194.
14. H. Takahashi, T. Yoshida, M. Mutoh, T. Sakai, H. Hasegawa: Solid-State Electron. 43 (1999) 1561.