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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1501-1507

In-situ scanning tunneling microscope study of formation process of ultrathin Si layer by molecular beam epitaxy on GaAs(001)-(2×4) surface

(4) Tsurumi, Naohiro a Ishikawa, Yasuhiko a Fukui, Takashi a Hasegawa, Hideki a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

(2 4); Formation process; GaAs; Molecular beam epitaxy; Scanning tunneling microscopy; Si interface control layer; Ultrathin Si layer

Indexed keywords

EID: 0006187916 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.1501 Document Type: Article

Times cited : (14)

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