Future emerging new memory technologies

Integrated Ferroelectrics

Volumn 64, Issue , 2004, Pages 3-14

  Kim, Kinam ^a   Lee, S Y ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Cell scaling; GST; High density FRAM; Mobile electronics; MRAM; MTJ; New memory; Next generation mobile memory; PRAM; PZT

Indexed keywords

ENERGY UTILIZATION; NANOTECHNOLOGY; RANDOM ACCESS STORAGE;

CELL SCALING; HIGH DENSITY FRAM; MOBILE ELECTRONICS; MRAM; NEW MEMORY;

NONVOLATILE STORAGE;

EID: 26444458840     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490893277     Document Type: Article

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