Ultra-thin PZT films for low-voltage ferroelectric non-volatile memories

Materials Research Society Symposium - Proceedings

Volumn 541, Issue , 1999, Pages 381-391

  Wouters, D J ^a   Norga, G J ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC POTENTIAL; FERROELECTRIC DEVICES; INTERFACES (MATERIALS); NONVOLATILE STORAGE; OPTIMIZATION; STOICHIOMETRY; SWITCHING; THIN FILMS;

COERCIVE FIELD; FERROELECTRIC NONVOLATILE MEMORIES; LOW VOLTAGE SWITCHING; ULTRA THIN FILMS; VOLTAGE SCALING;

LEAD COMPOUNDS;

EID: 0032592315     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (19)

1. B.A.Tuttle, in Thin Film Ferroelectric materials and Devices, edited by R.Ramesh, Kluwer, Boston, MA, 1997, pp.145-165.
2. The superior low-voltage switching of SBT was attributed to lower Ec and also the possibility to make thinner (<100nm) films of good quality, see e.g.: J.F.Scott, F.M.Ross, C.A.Paz de Araujo, M.C.Scoot, and M.Huffman, MRS Bulleting, 21 (7), pp.33-39 (1996). For film thicknesses of, SBT shows switching already at IV (while ∼2V is required for saturated switching), see [17].
3. G.J.Norga, L.Fè, D.J.Wouters, A.Bartic, and H.E.Maes, this proceedings.
4. F.Tsai and J.M.Cowley, App.Phys.Lett. 65(15), pp.1906-1908 (1994).
5. P.K.Larsen, G.J.M.Dormans, D.J.Taylor, and P.J.vanVeldhoven, J.Appl.Phys. 76(4), p.2405-2413 (1994).
6. C.H.Ahn, T.Tybell, J.-M.Triscone, presented at the ECAPD IV'98 - ISAF XI '98 -Electroceramics VI '98 joined conference, Montreux, (Switzerland), Aug. 1998.
7. T.Hidaka, T.Marayuma, I.Sakai, M.Saito, L.A.Wills, R.Hiskes, S.A.Dicarolis, and J.Amano, Integrated Ferroelectrics 17(1-4),
8. th International Symposium on Integrated Ferroelectric, March 1997, Santa Fe (NM), p.319 (1997).
9. C.Björmander, K.Sreenivas, M.Duan, A.M.Grishin, and K.V.Rao, Appl.Phys.Lett. 66 (19), pp. 2493-2495 (1995).
10. L.E.Sanchez, S.-Y. Wu, and I.K.Naik, Appl.Phys.Lett. 56 (24), pp. 2399-2401 (1990).
11. K.Amanuma, T.Mori, T.Hase, T.Sakuma, A.Ochi, and Y.Miyasaka, Jpn. J.Appl.Phys. Vol.32 (1993), pp.4150-4153.
12. K.Aoki, Y.Fukuda, K.Numara, and A.Nishimura, Jpn. J.Appl.Phys., Vol.34 (1995), pp.746-751.
13. th International Symposium on Integrated Ferroelectrics, March 1997, Santa Fe, NM (unpublished).
14. D.J.Wouters, G.Willems, E.G.Lee, H.E.Maes, Integrated Ferroelectrics, 15, pp.79-87 (1997).
15. th International Symposium on Integrated Ferroelectrics, March 1998, Monterey, CA (unpublished).
16. K.Ozaki, K.Nagata, J.of The American Ceramic Society, 56, No.2, pp.82-86 (1973).
17. S.B.Desu, C.H.Peng, L.Kammerdiner, P.J.Schuele, in Ferroelectric Thin Films, edited by E.R.Meyers and A.Kingon (Mat.Res.Soc.Symp.Proc. Vol.200, Pittsburgh, PA, 1990), pp.319-324.
18. K.Amanuma, T.Kunio, Jpn. J.Appl.Phys., 35 (1996), pp.5229-5231.
19. The term poling was originally used in the context of polarization alignment in ferroelectric ceramics, required to obtain pyroelectric and piezoelectric response. For these purposes, the resultant polarization alignment was more important than the concurrent modification of the domain structure. In our case, on the other hand, the modification of the domain structure is more important as it influences subsequent switching behavior. However, as both processes go together as a result of a high voltage application, we call both of them (electrical) "poling" (the term electrical contrasts with possible stress or thermal poling).