Spin-polarized tunneling in fully epitaxial semiconductor-based magnetic tunnel junctions

Journal of Superconductivity and Novel Magnetism

Volumn 16, Issue 2, 2003, Pages 241-248

  Tanaka, M ^a,b   Higo, Y ^a   Sugahara, S ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

GaMnAs; Magnetic heterostructure; Magnetic tunnel junction; MnAs; Tunneling magnetoresistance

Indexed keywords

CRYSTAL STRUCTURE; ELECTRODES; FERROMAGNETIC MATERIALS; HETEROJUNCTIONS; MAGNETIC FIELDS; MAGNETIZATION; PHOTOLITHOGRAPHY; POLARIZATION; RANDOM ACCESS STORAGE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICES; SUBSTRATES;

MAGNETIC HETEROSTRUCTURES; MAGNETIC TUNNEL JUNCTIONS (MTJ); SPIN POLARIZED TUNNELING; TUNNELING MAGNETORESISTANCE;

ELECTRON TUNNELING;

EID: 2642558407     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: None     Document Type: Article

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