Thermally evaporated ZrO2

Electrochemical and Solid-State Letters

Volumn 7, Issue 6, 2004, Pages

  Bhaskaran, M ^a   Swain, P K ^a   Misra, D ^b  

^a SARNOFF CORPORATION   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; DIELECTRIC MATERIALS; PARTIAL PRESSURE; SPUTTERING; THICKNESS MEASUREMENT; ZIRCONIA;

FORMING GAS ANNEAL (FGA); INTERFACIAL FILMS; THERMAL EVAPORATION; VOLTAGE SHIFT;

EVAPORATION;

EID: 2642522147     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1701587     Document Type: Article

References (12)

1. R. Brenier and A. Gagnaire, Thin Solid Films, 392, 142 (2001).
2. J. P. Chang and Y. S. Lin, J. Appl. Phys., 90, 2964 (2001).
3. H. Huff, Tech. Dig. - Int. Electron Devices Meet., 2001, 123.
4. J. P. Chang, Y. S. Lin, and K. Chu, J. Vac. Sci. Technol. B, 19, 1782 (2001).
5. D. A. Neumayer and E. Cartier, J. Appl. Phys., 90, 1801 (2001).
6. T. Tsukada, S. Venigalla, and J. H. Adair, J. Am. Ceram. Soc., 80, 3187 (1997).
7. S. Ramamurthy, N. S. Subramanian, K. Sarangarajan, and B. Santhi, Bull. Electrochem., 14, 446 (1998).
8. M. Matsuoka, S. Isotani, J. F. D. Chubaci, S. Miyake, Y. Setsuhara, K. Ogata, and N. Kuratani, J. Appl. Phys., 88, 3773 (2000).
9. P. T. Gao, L. J. Meng, M. P. dos Santos, V. Teixeira, and M. Andritschky, Appl. Surf. Sci., 173, 84 (2001).
10. S. Ben Amor, B. Regier, G. Baud, M. Jacquet, and M. Nardin, Mater. Sci. Eng., B, 57, 28 (1998).
11. S. Venkataraj, O. Kappertz, H. Weis, R. Drese, R. Jayavel, and M. Wuttig, J. Appl. Phys., 92, 3599 (2002).
12. K.-Y. Lim, D.-G. Park, H.-J. Cho, J.-J. Kim, J.-M. Yang, II.-S. Choi, I.-S. Yeo, and J. W. Park, J. Appl. Phys., 91, 414 (2002).