Low-energy ion implantation using the arsenic dimer ion: Process characterization and throughput improvement

Journal of the Electrochemical Society

Volumn 152, Issue 8, 2005, Pages

  Kopalidis, Peter ^a   Freer, Brian S ^a   Rathmell, Mark ^b  

^a AXCELIS TECHNOLOGIES   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DIMERS; MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS;

ARSENIC DIMER IONS; HIGH CURRENT ION IMPLANTERS; SHEET RESISTANCE;

ION IMPLANTATION;

EID: 25644459217     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1945728     Document Type: Article

References (7)

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