Arsenic clustering and precipitation analysis in ion-implanted Si wafers by x-ray absorption spectroscopy and SIMS

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 600-603

  Sahiner, M A ^a   Novak, S W ^a   Woicik, J ^b   Liu, J ^c   Krishnamoorty, V ^d  

^a Evans East   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^d University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC PRECIPITATES; CONCENTRATION-DEPTH PROFILE; COORDINATION NUMBER; EXAFS; EXAFS DATA; MARLOWE SIMULATIONS; NEAREST NEIGHBOR DISTANCE; NEAREST-NEIGHBORS; SI WAFER; SOLID SOLUBILITIES;

ARSENIC; CLUSTER ANALYSIS; FOURIER ANALYSIS; ION IMPLANTATION; PRECIPITATES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS;

ABSORPTION SPECTROSCOPY;

EID: 78649817972     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924224     Document Type: Conference Paper

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