Molecular n-type dopant implants

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 119-121

  Agarwal, A ^a   Stevenson, B A ^a   Ameen, M S ^a   Freer, B S ^a   Poate, J M ^a   Ohta, Y ^b   Nakajima, K ^b   Kimura, K ^b  

^a AXCELIS TECHNOLOGIES   (United States)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

component; arsenic; low energy ion implantation; molecular ions; ultra shallow junctions

Indexed keywords

AMORPHIZATION; ARSENIC; ION IMPLANTATION; IONS; MONOMERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

AMORPHOUS LAYER; AS-IMPLANTED DAMAGE; DOPANT ACTIVATION; HIGH RESOLUTION RUTHERFORD BACKSCATTERING; LOW ENERGY ION IMPLANTATION; MOLECULAR IONS; ULTRA LOW ENERGY; ULTRA SHALLOW JUNCTION;

DIMERS;

EID: 33846977626     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1257953     Document Type: Conference Paper

References (10)

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