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Volumn 50, Issue 5, 2005, Pages 1613-1615

Vapor pressure of di-tert-butylsilane

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; METALLORGANIC VAPOR PHASE EPITAXY; THERMAL EFFECTS; VAPOR PRESSURE;

EID: 25644450268     PISSN: 00219568     EISSN: None     Source Type: Journal    
DOI: 10.1021/je050084x     Document Type: Article
Times cited : (14)

References (14)
  • 5
    • 0007284502 scopus 로고
    • Silicon-compounds with strong intramolecular steric interactions 10. New synthesis of 1,2,3,4-dithiasilethane
    • Weidenbruch, M.; Schaefer, A.; Rankers, R. Silicon-compounds with strong intramolecular steric interactions 10. New synthesis of 1,2,3,4-dithiasilethane. J. Organomet. Chem. 1980, 195, 171-184.
    • (1980) J. Organomet. Chem. , vol.195 , pp. 171-184
    • Weidenbruch, M.1    Schaefer, A.2    Rankers, R.3
  • 6
    • 25644445503 scopus 로고    scopus 로고
    • Product code 604411, Akzo Nobel HPMO GmbH
    • Safety Data Sheet, Product code 604411, Akzo Nobel HPMO GmbH, 2004.
    • (2004) Safety Data Sheet
  • 7
    • 0034508829 scopus 로고    scopus 로고
    • A comparative study of GaAs- And InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources
    • Veling, P. A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources. Prog. Cryst. Growth Charact. 2000, 41, 85-131.
    • (2000) Prog. Cryst. Growth Charact. , vol.41 , pp. 85-131
    • Veling, P.1
  • 9
    • 0000183966 scopus 로고
    • Thermodynamic analysis of metalorganic vapor phase epitaxy of III-V alloy semiconductor
    • Seki, H.; Koukitu, A. Thermodynamic analysis of metalorganic vapor phase epitaxy of III-V alloy semiconductor. J. Cryst. Growth 1986, 74, 172-180.
    • (1986) J. Cryst. Growth , vol.74 , pp. 172-180
    • Seki, H.1    Koukitu, A.2
  • 11
    • 25644440158 scopus 로고    scopus 로고
    • Naphthalene as a reference material for vapor pressure measurement
    • submitted for publication
    • Fulem, M.; Růžička, K.; Růžička, V. Naphthalene as a reference material for vapor pressure measurement. J. Chem. Eng. Data (submitted for publication).
    • J. Chem. Eng. Data
    • Fulem, M.1    Růžička, K.2    Růžička, V.3
  • 12
    • 0039617727 scopus 로고
    • Synthesis and reactivity of some tert-butyl-disilanes and -digermanes
    • Triplett, K.; Curtis, M. D. Synthesis and reactivity of some tert-butyl-disilanes and -digermanes J. Organomet. Chem. 1976, 107, 23-32.
    • (1976) J. Organomet. Chem. , vol.107 , pp. 23-32
    • Triplett, K.1    Curtis, M.D.2
  • 13
    • 25644458761 scopus 로고
    • A simple and convenient method for preparing di-tert-butylsilanes
    • Watanabe, H.; Ohkawa, T.; Muraoka, T.; Nagai, Y. A simple and convenient method for preparing di-tert-butylsilanes. Chem. Lett. 1981, 1321-1322.
    • (1981) Chem. Lett. , pp. 1321-1322
    • Watanabe, H.1    Ohkawa, T.2    Muraoka, T.3    Nagai, Y.4
  • 14
    • 0027681939 scopus 로고
    • Low-pressure chemical-vapor-deposition of silicon-carbide from ditertiarybutylsilane
    • Grow, J. M.; Levy, R. A.; Bhaskaran, M.; Boeglin, H. J.; Shalvoy, R. Low-pressure chemical-vapor-deposition of silicon-carbide from ditertiarybutylsilane. J. Electrochem. Soc. 1993, 140, 3001-3007.
    • (1993) J. Electrochem. Soc. , vol.140 , pp. 3001-3007
    • Grow, J.M.1    Levy, R.A.2    Bhaskaran, M.3    Boeglin, H.J.4    Shalvoy, R.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.