SCOPUS 정보 검색 플랫폼

Volumn 7, Issue 4, 1997, Pages 181-187

Characteristics of wide-gap hydrogenated amorphous SiC films prepared using electron cyclotron resonance CVD from acetylene

(2) Yoon, S F a Ahn, J a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACETYLENE; AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; ENERGY GAP; FILM PREPARATION; HYDROGEN; INFRARED RADIATION; LIGHT ABSORPTION; PHOTOLUMINESCENCE; SILANES; SILICON CARBIDE;

ELECTRON CYCLOTRON RESONANCE CHEMICAL VAPOR DEPOSITION (ECRCVD); WIDE BANDGAP HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS;

OPTICAL MATERIALS;

EID: 0031146966 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-3467(97)00014-1 Document Type: Article

Times cited : (1)

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