Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane

Applied Surface Science

Volumn 159, Issue , 2000, Pages 556-560

  Yasui, Kanji ^a   Asada, Kunio ^a   Akahane, Tadashi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLYTIC CAPACITORS; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR PLASMAS; SILANES; SILICON CARBIDE; SUBSTRATES; TRIODES;

BYPASS CONDENSERS; CUBIC-SILICON CARBIDE; GROWTH TEMPERATURE; TRIODE PLASMAS;

SEMICONDUCTING FILMS;

EID: 0034207154     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00047-7     Document Type: Article

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