Deposits obtained by photolysis of hexamethyldisilane by ArF excimer laser (SiC thin film preparation by ArF excimer laser chemical vapor deposition, Part 2)

Thin Solid Films

Volumn 300, Issue 1-2, 1997, Pages 95-100

  Watanabe, Akio ^a   Mukaida, Masakazu ^a   Tsunoda, Tatsuo ^a   Imai, Yoji ^a  

^a NATL INST OF MAT AND CHEM RES   (Japan)

Author keywords

Chemical vapor deposition (CVD); Silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EXCIMER LASERS; FILM PREPARATION; INFRARED SPECTROSCOPY; LASER APPLICATIONS; PHOTOLYSIS; SCANNING ELECTRON MICROSCOPY; SILANES; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

HEXAMETHYLDISILANES; LASER CHEMICAL VAPOR DEPOSITION (LCVD);

SILICON CARBIDE;

EID: 0031139864     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09554-5     Document Type: Article

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