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Volumn 202, Issue 6, 2005, Pages 970-976

Transport properties of double-gate SiO 2-Si-SiO 2 quantum well

Author keywords

[No Author keywords available]

Indexed keywords

HALL CARRIER DENSITY; LOW TEMPERATURE TRANSPORT PROPERTIES; SILICON-ON-INSULATOR SUBSTRATES; WAFER BONDING;

CARRIER CONCENTRATION; HALL EFFECT; LOW TEMPERATURE EFFECTS; MAGNETIC FIELDS; SEMICONDUCTOR QUANTUM WELLS; TRANSPORT PROPERTIES;

SILICA;

EID: 25444531449 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200460707 Document Type: Conference Paper

Times cited : (11)

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