Interlayer charge transfer in bilayer quantum Hall states at various filling factors

Solid State Communications

Volumn 112, Issue 11, 1999, Pages 625-629

  Muraki, K ^a   Saku, T ^a   Hirayama, Y ^a   Kumada, N ^b   Sawada, A ^b   Ezawa, Z F ^b  

^a NTT Basic Research Laboratories   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; HALL EFFECT; HETEROJUNCTIONS; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE;

FILLING FACTOR; INTERLAYER CHARGE TRANSFER; LANDAU LEVEL; PSEUDO SPIN POLARIZATION; QUANTUM HALL EFFECTS; ZEEMAN ENERGIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033328668     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00407-X     Document Type: Article

References (18)

1. Murphy S.Q., Eisenstein J.P., Boebinger G.S., Pfeiffer L.N., West K.W. Phys. Rev. Lett. 72:1994;728.
2. Hyndman R.J., Ihn T., Gallagher B.L., Rodgers P.J., Henini M., Foster T.J., Middleton J.R. Surf. Sci. 361/362:1996;117.
3. Hamilton A.R., Simmons M.Y., Bolton F.M., Patel N.K., Millard I.S., Nicholls J.T., Ritchie D.A., Pepper M. Phys. Rev. B. 54:1996;R5259.
4. Ezawa Z.F., Iwazaki A. Int. J. Mod. Phys. B. 6:1992;3205.
5. Ezawa Z.F., Iwazaki A. Phys. Rev. B. 47:1993;7295.
6. Ezawa Z.F., Iwazaki A. Phys. Rev. B. 48:1993;15 189.
7. Yang K., Moon K., Zheng L., MacDonald A.H., Girvin S.M., Yoshioka D., Zhang S.-C. Phys. Rev. Lett. 72:1994;732.
8. Yang K., Moon K., Belkhir L., Mori H., Girvin S.M., MacDonald A.H., Zheng L., Yoshioka D. Phys. Rev. B. 54:1996;11644.
9. Sawada A., Ezawa Z.F., Ohno H., Horikoshi Y., Ohno Y., Kishimoto S., Matsukura F., Yasumoto M., Urayama A. Phys. Rev. Lett. 80:1998;4534.
10. Pellegrini V., Pinczuk A., Dennis B.S., Plaut A.S., Pfeiffer L.N., West K.W. Phys. Rev. Lett. 78:1997;310.
11. Pellegrini V., Pinczuk A., Dennis B.S., Plaut A.S., Pfeiffer L.N., West K.W. Science. 281:1998;799.
12. Sawada A., Ezawa Z.F., Ohno H., Horikoshi Y., Sugie O., Kishimoto S., Matsukura F., Ohno Y., Yasumoto M. Solid State Commun. 103:1997;447.
13. Sawada A., Ezawa Z.F., Ohno H., Horikoshi Y., Kishimoto S., Matsukura F., Ohno Y., Yasumoto M., Urayama A. Physica B. 249-251:1998;836.
14. Sawada A., Ezawa Z.F., Ohno H., Horikoshi Y., Urayama A., Ohno Y., Kishimoto S., Matsukura F., Kumada N. Phys. Rev. B. 59:1999;14888.
15. Ezawa Z.F. Phys. Rev. B. 55:1997;7771.
16. Ezawa Z.F., Iwazaki A. Int. J. Mod. Phys. B. 8:1994;2111.
17. K. Muraki, N. Kumada, T. Saku, Y. Hirayama, The Extended Abstract of 1999 International Conference on Solid State Devices and Materials, Tokyo, 1999.
18. Z.F. Ezawa, A. Sawada, K. Muraki, Y. Hirayama, in: The Proceedings of the 13th International Conference on the Electronic Properties of Two-Dimensional Systems, Ottawa, 1999.