The effect of charge on kink migration at 90° partial dislocations in SiC

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 877-882

  Blumenau, A T ^a   Eberlein, T A G ^b   Jones, R ^b   Oberg S ^c   Frauenheim, T ^d   Briddon, P R ^e  

^a MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^d UNIVERSITY OF PADERBORN   (Germany)

^e NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR DEVICES; CORE STRUCTURES; DISLOCATION KINKS; PARTIAL DISLOCATIONS;

ATOMS; CRYSTAL ORIENTATION; DEGRADATION; DISLOCATIONS (CRYSTALS); DYNAMICS;

SILICON CARBIDE;

EID: 25444520266     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460504     Document Type: Conference Paper

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