Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 642-646

  Anceau, S ^a,b   Lefebvre, P ^a   Suski, T ^b   Konczewicz, L ^a   Hirayama, H ^c   Aoyagi, Y ^c  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONFINEMENT EFFECTS; ELECTRON HOLES; LIGHT INTENSITY; LOCALIZATION;

COMPOSITION; ELECTRIC FIELDS; LIGHT EMISSION; MICROSCOPIC EXAMINATION; PHOTOLUMINESCENCE; RADIATION; SILICON NITRIDE; SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 25444449792     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460455     Document Type: Conference Paper

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