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Volumn 201, Issue 2, 2004, Pages 190-194

Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; EPITAXIAL GROWTH; HETEROJUNCTIONS; HYDROSTATIC PRESSURE; INTERFACES (MATERIALS); LIGHT EMISSION; LIGHT POLARIZATION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; ENERGY GAP; LATTICE CONSTANTS; PIEZOELECTRIC MATERIALS; POLARIZATION;

EID: 10744233781     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303980     Document Type: Conference Paper
Times cited : (5)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.