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Volumn 201, Issue 2, 2004, Pages 190-194
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Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures
a,b b a a a a b c c d d |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC FIELD EFFECTS;
EPITAXIAL GROWTH;
HETEROJUNCTIONS;
HYDROSTATIC PRESSURE;
INTERFACES (MATERIALS);
LIGHT EMISSION;
LIGHT POLARIZATION;
OPTOELECTRONIC DEVICES;
PHOTOLUMINESCENCE;
PRESSURE EFFECTS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR QUANTUM WELLS;
ENERGY GAP;
LATTICE CONSTANTS;
PIEZOELECTRIC MATERIALS;
POLARIZATION;
ELECTRICAL TRANSPORT MEASUREMENTS;
QUANTUM CONFINED STARK EFFECT (QCSE);
SEMICONDUCTING ALUMINUM COMPOUNDS;
MULTIQUANTUM WELLS (MQW);
RADIATIVE RECOMBINATION;
TRANSITION ENERGY;
WAVE FUNCTIONS;
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EID: 10744233781
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/pssa.200303980 Document Type: Conference Paper |
Times cited : (5)
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References (11)
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