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Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 3, 2005, Pages 419-424

Photoacoustic and photoluminescence studies of H + ion-implanted n-GaAs

(3) Srinivasan, R a Sanjeeviraja, C b Ramachandran, K c

a THIAGARAJAR COLLEGE (India)

b ALAGAPPA UNIVERSITY (India)

c MADURAI KAMARAJ UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

BRIDGMAN METHODS; HYDROGEN IONS; PHOTOLUMINESCENCE SPECTROSCOPY; RAMAN MEASUREMETERS;

CHARGE CARRIERS; HYDROGEN; PHOTOACOUSTIC EFFECT; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ION IMPLANTATION;

EID: 25444435393 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200406931 Document Type: Article

Times cited : (2)

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