The study of structural properties of 100 keV hydrogen ion implanted semi-insulating GaAs single crystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 149, Issue 4, 1999, Pages 451-459

  Udhayasankar, M ^a   Kumar, J ^a   Ramasamy, P ^a   Sekar, K ^b   Sundaravel, B ^b   Ferrari, C ^c   Lazzarini, L ^c   Magudapathy, P ^d   Nair, K G M ^d  

^a ANNA UNIVERSITY   (India)

^b INSTITUTE OF PHYSICS   (India)

^c CNR   (Italy)

^d INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

Channeling measurements; Double crystal X ray diffractometry; Hydrogen ion implantation; Rutherford backscattering spectrometry; Semi insulating GaAs; Structural properties; Transmission electron microscopy analysis

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELECTRIC INSULATING MATERIALS; HYDROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

X RAY DOUBLE CRYSTAL DIFFRACTOMETRY;

ION IMPLANTATION;

EID: 0033097407     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00964-1     Document Type: Article

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