Electrical behaviour of high energy 120Sn implantation in n- and p-type GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 421-425

  Narsale, A M ^a   Ali, Yousuf Pyar ^b   Arora, B M ^c  

^a UNIVERSITY OF MUMBAI   (India)

^b Humanities and Applied Sciences Kholan   (Yemen)

^c TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

GaAs; MeV ion implantation; Radiation defects; Sn

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; ION IMPLANTATION; RADIATION DAMAGE; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; TIN; VOLTAGE MEASUREMENT;

RADIATION DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033513799     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00715-0     Document Type: Article

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