An ab initio study of 4H-SiC(0001) and (0001̄) surface processes at experimental temperatures

Thin Solid Films

Volumn 458, Issue 1-2, 2004, Pages 191-196

  Olander, J ^a   Larsson, K M E ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

Adsorption; Computer simulation; Silicon carbide; Surface structure

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTALLOGRAPHY; FREE RADICALS; MOLECULAR DYNAMICS; SURFACE STRUCTURE;

ABSTRACTION; STACKING ORDERS; SURFACE PROCESSES; VAPOR GROWTH;

SILICON CARBIDE;

EID: 2542482097     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.055     Document Type: Article

References (25)

1. Aylward G., Finlay T. SI Chemical Data. 3rd: 1994;Wiley, Singapore.
2. Bechstedt F., Käckell P., Zywietz A., Karch K., Adolph B., Tenelsen K., Furthmüller J. Phys. Status Solidi (B). 202:1997;35.
3. Davies R., Kelner G., Shur M., Palmour J.W., Edmond J.A. Proc. IEEE. 79:1991;677.
4. Dinger A., Lutterloh C., Küppers J. J. Chem. Phys. 114:2001;5338.
5. Ellison A., Zhang J., Peterson J., Henry A., Wahab Q., Bergman J.P., Makarov Y.N., Vorob'ev A., Vehanen A., Janzén E. Mater. Sci. Eng. 61-62:1999;113.
6. Harris G.L. Properties of Silicon Carbide. 1995;Inspec, London.
7. Hohenberg P., Kohn W. Phys. Rev. 136:1964;B864.
8. Kleinman L., Bylander D.M. Phys. Rev. Lett. 48:1982;1425.
9. Kohn W., Sham L.J. Phys. Rev. 140:1965;A1133.
10. Larsson K., Lunell S. J. Phys. Chem. 101:1997;76.
11. Lin M.E., Strite W., Agarwal A., Salvador A., Zhou G.L., Teraguchi N., Rockett A., Moroç H. Appl. Phys. Lett. 62:1993;702.
12. Monkhorst H.J., Pack J.D. Phys. Rev. B. 13:1976;5188.
13. Nishino S., Powell J.A., Will H. Appl. Phys. Lett. 42:1983;460.
14. Nosé S.J. J. Chem. Phys. 91:1984;511.
15. Oshita Y. Mater. Res. Soc. Symp. Proc. 162:1990;1.
16. Payne M.C., Teter M.P., Allan D.C., Arias T.A., Joannopoulus J.D. Rev. Mod. Phys. 64:1992;1045.
17. Perdew J.P., Zunger A. Phys. Rev. B. 23:1981;5048.
18. Perdew J.P., Wang Y. Phys. Rev. B. 45:1992;13 244.
19. Sieber N., Mantel B.F., Seyller T.h., Ristein J., Ley L., Heller T., Batchelor D.R., Schmeisser D. Appl. Phys. Lett. 78:2001;1216.
20. Srinavasan E., Parson G.N. Appl. Phys. Lett. 72:1998;456.
21. Starke U. Phys. Stat. Sol. 202:1997;475.
22. Tsushida H., Kamata I., Izumi K. Jpn J. Appl. Lett. Part 2. 36:1997;L699.
23. Tsushida H., Kamata I., Izumi K. Mater. Sci. Forum. 264:1998;351.
24. van Elsbergen V., Janzen O., Mönch W. Mater. Sci. Eng. B46:1997;366.
25. Verlet L. Phys. Rev. 159:1967;98.