Study of the NiTi/SiO2 interface: Analysis of the electronic distributions

Surface and Interface Analysis

Volumn 34, Issue 1, 2002, Pages 694-697

  Jarrige, Ignace ^a   Jonnard, Philippe ^a   Frantz Rodriguez, Nadège ^b   Danaie, Kamran ^b   Bosseboeuf, Alain ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

NiTi; Silicide; SiO2; Solid solid interface; Valence states; X ray emission spectroscopy

Indexed keywords

ATOMS; CHARACTERIZATION; DEPOSITION; ELECTRON EMISSION; ELECTRONIC DENSITY OF STATES; MAGNETRON SPUTTERING; NICKEL COMPOUNDS; OXIDATION; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON INDUCED X RAY EMISSION SPECTROSCOPY; ELECTRONIC DISTRIBUTION; NICKEL TITANIUM; PHOTON ENERGY; SILICON OXIDE; SPECTRAL DENSITY; THERMAL OXIDATION; VALENCE STATES;

PHASE INTERFACES;

EID: 0036692833     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1390     Document Type: Conference Paper

References (19)