High-frequency small-signal conductivity of hot electrons in nitride semiconductors

Applied Physics Letters

Volumn 84, Issue 18, 2004, Pages 3630-3632

  Sokolov, V N ^a,b   Kim, K W ^a   Kochelap, V A ^b   Woolard, D L ^c  

^a North Carolina State University   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TEMPERATURE; NITRIDE SEMICONDUCTORS; PHONON SCATTERING; SMALL-SIGNAL CONDUCTIVITY;

CRYSTALS; DIELECTRIC RELAXATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRON SCATTERING; HEATING; MICROWAVES; NITRIDES; PHASE SHIFT; PHONONS;

SEMICONDUCTOR MATERIALS;

EID: 2542473360     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1738518     Document Type: Article

References (19)

1. M. van Exter and D. Grischkowsky, Phys. Rev. B 41, 12140 (1990): T.-I. Jeon and D. Grischkowsky, Phys. Rev. Lett. 78, 1106 (1997).
2. M. van Exter and D. Grischkowsky, Phys. Rev. B 41, 12140 (1990): T.-I. Jeon and D. Grischkowsky, Phys. Rev. Lett. 78, 1106 (1997).
3. G. Segschneider, F. Jacob, T. Löffler, H. G. Roskos, S. Tautz, P. Kiesel, and G. Döhler, Phys. Rev. B 65, 125205 (2002).
4. S. J. Pearton. F. Ren, A. P. Zhang, and K. P. Lee, Mater. Sci. Eng., R. 30, 55 (2000).
5. W. Zhang, A. K. Azad, and D. Grischkowsky, Appl. Phys. Lett. 82, 2841 (2003).
6. P. Tripathi and B. K. Ridley, Phys. Rev. B 66, 195301 (2002).
7. M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe (Wiley, New York, 2001).
8. K. W. Kim, V. A. Kochelap, V. N. Sokolov, and S. M. Komirenko, in GaN-based Materials and Devices: Growth, Fabrication, Characterization and Performance, edited by M. Shur and R. F. Davis (World Scientific, Singapore, to be published).
9. V. F. Gantmakher and Y. B. Levinson, Carrier Scattering in Metals and Semiconductors (North-Holland, Amsterdam, 1987), Chap. 6, p. 132.
10. W. Xu, F. M. Peeters, and J. T. Devreese, Phys. Rev. B 43, 14134 (2001); F. M. Peeters and J. T. Devreese, Phys. Rev. B 23, 1936 (1981).
11. W. Xu, F. M. Peeters, and J. T. Devreese, Phys. Rev. B 43, 14134 (2001); F. M. Peeters and J. T. Devreese, Phys. Rev. B 23, 1936 (1981).
12. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).
13. Z. C. Huang, R. Goldenberg, J. C. Chen, Y. Zheng, D. B. Mott, and P. Shu, Appl. Phys. Lett. 67, 2825 (1995).
14. B. E. Foutz, L. E. Eastman, U. V. Bhapkar, and M. S. Shur, Appl. Phys. Lett. 70, 2849 (1997); B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. F. Eastman, J. Appl. Phys. 85, 7727 (1999).
15. B. E. Foutz, L. E. Eastman, U. V. Bhapkar, and M. S. Shur, Appl. Phys. Lett. 70, 2849 (1997); B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. F. Eastman, J. Appl. Phys. 85, 7727 (1999).
16. M. Farahmand, C. Garetto, E. Bellotti, K. F. Brennan, M. Goano, E. Chillino, G. Ghione, J. D. Albrecht, and P. P. Ruden, IEEE Trans. Electron Devices 48, 535 (2001); T.-H. Yu and K. F. Brennan, J. Appl. Phys. 91, 3730 (2002).
17. M. Farahmand, C. Garetto, E. Bellotti, K. F. Brennan, M. Goano, E. Chillino, G. Ghione, J. D. Albrecht, and P. P. Ruden, IEEE Trans. Electron Devices 48, 535 (2001); T.-H. Yu and K. F. Brennan, J. Appl. Phys. 91, 3730 (2002).
18. S. M. Komirenko, K. W. Kim, V. A. Kochelap, and M. A. Stroscio, Phys. Rev. B 64, 113207 (2001).
19. M. Shur, GaAs Devices and Circuits (Plenum, New York, 1987).