Runaway effects in nanoscale group-III nitride semiconductor structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 11, 2001, Pages 1132071-1132074

  Komirenko, S M ^a   Kim, K W ^a   Kochelap, V A ^b   Stroscio, M A ^c  

^a North Carolina State University   (United States)

^b INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CRYSTAL STRUCTURE; ELECTRIC FIELD; ELECTRON TRANSPORT; NANOPARTICLE; SEMICONDUCTOR; STRUCTURE ANALYSIS; VELOCITY;

EID: 0035884081     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/physrevb.64.113207     Document Type: Article

References (7)