Global critical dimension uniformity improvement for mask fabrication with negative-tone chemically amplified resists by zone-controlled postexposure bake

Journal of Microlithography, Microfabrication and Microsystems

Volumn 3, Issue 2, 2004, Pages 203-211

  Berger, Lothar ^a   Dress, Peter ^a   Gairing, Thomas ^a   Chen, Chia Jen ^b   Hsieh, Ren Guey ^b   Lee, Hsin Chang ^b   Hsieh, Hung Chang ^b  

^a STEAG AG   (Germany)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

65 nm node; Chemically amplified resist; Global critical dimension uniformity; Multizone hotplate; Postexposure bake; Postexposure delay

Indexed keywords

ELECTRON BEAMS; ERROR ANALYSIS; HEAT TRANSFER; OPTIMIZATION; SENSITIVITY ANALYSIS; SENSORS; VACUUM;

65-NM NODE; CHEMICALLY AMPLIFIED RESIST; GLOBAL CRITICAL DIMENSION UNIFORMITY; MULTIZONE HOTPLATE; POSTEXPOSURE BAKE; POSTEXPOSURE DELAY;

MASKS;

EID: 2542448484     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1683338     Document Type: Article

References (10)

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