Deep reactive ion etching of commercial PMMA in O2/CHF 3, and O2/Ar-based discharges

Journal of Micromechanics and Microengineering

Volumn 14, Issue 5, 2004, Pages 663-666

  Zhang, Congchun ^a   Yang, Chunsheng ^a   Ding, Duifu ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CROSSLINKING; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; FLOW OF FLUIDS; GLASS; MIXTURES; MOLECULAR WEIGHT; OXYGEN; PHOTORESISTS; PLASMA THEORY; REACTIVE ION ETCHING; SOLIDIFICATION; SPUTTERING; STRENGTH OF MATERIALS; SURFACE ROUGHNESS;

ETCH RATES; FLOW RATES; GAS MIXTURES; GLASS WAFERS;

POLYMETHYL METHACRYLATES;

EID: 2542444296     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/14/5/001     Document Type: Article

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