FIB technology applied to the improvement of the crystal quality of GaN and to the fabrication of organised arrays of quantum dots

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 610-614

  Gierak, J ^a   Bourhis, E ^a   Jede, R ^b   Bruchhaus, L ^b   Beaumont, B ^c   Gibart, P ^c  

^a CNRS   (France)

^b RAITH GmbH   (Germany)

^c Lumilog 2720 ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; GALLIUM NITRIDE; ION BEAMS; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR QUANTUM DOTS; SILICON NITRIDE;

EPITAXIAL LATERAL OVERGROWTH (ELO); FOCUSED ION BEAMS (FIB); RADIATION ENHANCED DIFFUSION (RED);

MICROELECTRONICS;

EID: 2542437284     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00169-8     Document Type: Conference Paper

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