Self-Consistent Subband Structure and Mobility of Two Dimensional Holes in Strained SiGe MOSFETs

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 443-448

  Krishnan, Santhosh ^a   Vasileska, Dragica ^a  

^a Arizona State University   (United States)

Author keywords

Hole Effective Mass; Hole Mobility; Interface Roughness; Mobility Calculation; SiGe Layer

Indexed keywords

HOLE CONCENTRATION; HOLE MOBILITY; MOSFET DEVICES; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM WELLS; SILICA; SILICON; SILICON OXIDES; SURFACE ROUGHNESS;

HOLE EFFECTIVE MASS; INTERFACE ROUGHNESS; LOW FIELD MOBILITY; SI-SIO2 INTERFACES; SIGE LAYERS; SIGE QUANTUM WELLS; SUBBAND STRUCTURES; SURFACE ROUGHNESS SCATTERING;

SI-GE ALLOYS;

EID: 21844442543     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011468.64475.94     Document Type: Article

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