A study of the interface and the related electronic properties in n-Al 0.35Ga0.65N/GaN heterostructure

Thin Solid Films

Volumn 491, Issue 1-2, 2005, Pages 242-248

  Zhang, Qinglin ^a   Wang, Dejun ^a   Wei, Xiao ^a   Xie, Tengfeng ^a   Li, Ziheng ^a   Lin, Yanhong ^a   Yang, Min ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

Electrical properties and measurements; Interface; Nitrides; Photovoltage

Indexed keywords

ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); NITRIDES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

BIMOLECULAR RECOMBINATION; ELECTRICAL PROPERTIES AND MEASUREMENTS; ELECTRON-HOLE PAIRS; PHOTOVOLTAGE (PV);

HETEROJUNCTIONS;

EID: 25144495178     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.06.017     Document Type: Article

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