Optical and structural investigation of In 1-xGa xP free-standing microrods

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Nakaema, M K K ^a   Godoy, M P F ^a   Brasil, M J S P ^a   Iikawa, F ^a   Silva, D ^a   Sacilotti, M ^b   Decobert, J ^c   Patriarche, G ^d  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b UNIVERSITÉ DE BOURGOGNE   (France)

^c NOKIA RESEARCH CENTER   (United States)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FREE-STANDING STRUCTURES; OPTICAL CHARACTERIZATION; OPTICAL EMISSION; PHOTOLUMINESCENCE SPECTROSCOPY;

CATALYSTS; DEPOSITION; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; SPHERES; SUBSTRATES; X RAY SPECTROSCOPY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 25144473466     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2033150     Document Type: Article

References (31)

1. C.-C. Chen and C.-C. Yeh, Adv. Mater. (Weinheim, Ger.) 12, 738 (2000).
2. R. Gupta, Q. Xiong, G. D. Mahan, and P. C. Eklund, Nano Lett. 3, 1745 (2003).
3. C.-C. Chen, J. Am. Chem. Soc. 123, 2791 (2001).
4. U. Krishnamachari, M. Borgstrom, B. J. Ohlsson, N. Panev, L. Samuelson, W. Seifert, M. W. Larsson, and L. R. Wallenberg, Appl. Phys. Lett. 85, 2077 (2004).
5. D.-X. Ye, T. Karabacak, B. K. Lim, G.-C. Wang, and T.-M. Lu, Nanotechnology 15, 817 (2004).
6. R. P. Wang, G. Xu, and P. Jin, Phys. Rev. B 69, 113303 (2004).
7. J. Jie, J. Phys. Chem. B 108, 8249 (2004).
8. J. Hu, T. W. Odom, and C. M. Lieber, Acc. Chem. Res. 32, 435 (1999).
9. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 04, 89 (1964).
10. W. I. Park, D. H. Kim, S.-W. Jung, and G.-C. Yi, Appl. Phys. Lett. 80, 4232 (2002).
11. A. M. Morales and C. M. Lieber, Science 279, 208 (1998).
12. H.-J. Choi, J. Phys. Chem. B 107, 8721 (2003).
13. M. Sacilotti, J. Decobert, H. Sik, G. Post, C. Dumas, P. Viste, and G. Patriarche, J. Cryst. Growth 272, 198 (2004).
14. M. Gudisken and Ch. Lieber, J. Am. Chem. Soc. 122, 8801 (2000).
15. M. Gudisken, J. Wang, and Ch. Lieber, J. Phys. Chem. B 105, 4062 (2001).
16. T. Kato, T. Matsumoto, and T. Ishida, Jpn. J. Appl. Phys., Part 1 27, 983 (1988).
17. M. Zachau and W. T. Masselink, Appl. Phys. Lett. 60, 2098 (1992).
18. R. Beserman, C. Hirlimann, and M. Balkanski, Solid State Commun. 20, 485 (1976).
19. R. M. Abdelouhab, R. Braunstein, K. Bärner, M. A. Rao, and H. Kroemer, J. Appl. Phys. 66, 787 (1989).
20. B. Jusserand and S. Slempkes, Solid State Commun. 49, 95 (1984).
21. H. Xu, J. Aizpurua, M. Käll, and P. Apell, Phys. Rev. E 62, 4318 (2000).
22. M. Suzuki, Y. Niidome, N. Terasaki, K. Inoue, Y. Kuwahara, and S. Yamada, Jpn. J. Appl. Phys., Part 2 43, 554 (2004).
23. G. D. Mahan, R. Gupta, Q. Xiong, C. K. Adu, and P. C. Eklund, Phys. Rev. B 68, 073402 (2003).
24. B. E. Gordon, A. S. W. Lee, D. A. Thompson, and B. J. Robinson, Semicond. Sci. Technol. 18, 782 (2003).
25. M. Sacilotti, R. A. Masut, and A. P. Roth, Appl. Phys. Lett. 48, 481 (1986).
26. V. G. Deibuk, Semiconductors 37, 1151 (2003).
27. O. Schuler, X. Wallart, and F. Mollot, J. Cryst. Growth 201, 280 (1999).
28. S.-H. Wei, L. G. Ferreira, and A. Zunger, Phys. Rev. B 41, 8240 (1990).
29. L. S. Vavilova, Semiconductors 32, 590 (1998).
30. R. T. Lee, C. M. Fetzer, S. W. Jun, D. C. Chapman, J. K. Shurtleff, G. B. Stringfellow, Y. W. Ok, and T. Y. Seong, J. Cryst. Growth 233, 490 (2001).
31. A. A. Bernussi, W. Carvalho, Jr., and M. K. K. D. Franco, J. Appl. Phys. 89, 4898 (2001).