Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 198-203

  Sacilotti, M ^a   Decobert, J ^b   Sik, H ^b   Post, G ^b   Dumas, C ^a   Viste, P ^a   Patriarche, G ^c  

^a UNIVERSITÉ DE BOURGOGNE   (France)

^b NOKIA RESEARCH CENTER   (United States)

^c CNRS   (France)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Metalorganic vapor phase epitaxy; B1. Ga metallic structures; B1. GaInP; B2. Semiconducting III V materials; B2. Semiconducting wire

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; NITROGEN; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSMISSION ELECTRON MICROSCOPY; WIRE;

GA METALLIC STRUCTURES; GAINP; SEMICONDUCTING III-V MATERIALS; SEMICONDUCTING WIRE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 9944254120     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.114     Document Type: Conference Paper

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