Gas-source MBE growth study of strained Ga1-xInxP layers on GaAs

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 280-283

  Schuler, O ^a   Wallart, X ^a   Mollot, F ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; TENSILE STRESS;

GAS-SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTOR GROWTH;

EID: 0032673254     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01340-2     Document Type: Article

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