Thermoelectric properties of RF-sputtered SiGe thin film for hydrogen gas sensor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 9 A, 2004, Pages 5978-5983

  Tajima, Kazuki ^a   Qiu, Fabin ^a,b   Shin, Woosuck ^a   Sawaguchi, Naoya ^a   Izu, Noriya ^a   Matsubara, Ichiro ^a   Murayama, Norimitsu ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JILIN UNIVERSITY   (China)

Author keywords

Hydrogen sensor; RF sputtering; SiGe; Thermoelectric; Thin film

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; HYDROGEN; MOLECULAR BEAM EPITAXY; PHOSPHORUS; SEEBECK EFFECT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SPUTTERING; THERMOELECTRICITY; THIN FILMS;

HYDROGEN SENSORS; RF-SPUTTERING; SIGE; THERMOELECTRIC (TE) PROPERTIES;

CHEMICAL SENSORS;

EID: 9144263302     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5978     Document Type: Article

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