The influence of Ar addition on the structure of an a-SiOCF film prepared by plasma-enhanced chemical vapour deposition

Journal of Physics D: Applied Physics

Volumn 34, Issue 2, 2001, Pages 155-159

  Ding, Shi Jin ^a   Wang, Peng Fei ^a   Zhang, David Wei ^a   Wang, Ji Tao ^a   Lee, Wei William ^b  

^a FUDAN UNIVERSITY   (China)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

PROPAGATION DELAYS;

ARGON; CHEMICAL BONDS; FLUOROCARBONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 0035111470     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/2/302     Document Type: Article

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