Comparison between organic spin-on BARC and carbon-containing CVD stack for 65nm gate patterning

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5753, Issue II, 2005, Pages 708-719

  Chapon, Jean Damien ^a   Chaton, Catherine ^b   Gouraud, Pascal ^a   Broekaart, Marcel ^c   Warrick, Scott ^d   Guilmeau, Isabelle ^b   Trouiller, Yorick ^b   Belledent, Jéôme ^c  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

^d FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

193nm lithography; 65nm Gate; Amorphous Carbon; Bottom anti reflective coating (BARC); Line Width Roughness (LWR); Organic BARC; Pattern Collapse

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; ETCHING; INTEGRATION; LIGHT REFLECTION; OPTIMIZATION; ORGANIC COATINGS; PARAMETER ESTIMATION; PHOTOLITHOGRAPHY;

193NM LITHOGRAPHY; 65NM GATE; AMORPHOUS CARBON; BOTTOM ANTI-REFLECTIVE COATING (BARC); LINE WIDTH ROUGHNESS (LWR); ORGANIC BARC; PATTERN COLLAPSE;

ANTIREFLECTION COATINGS;

EID: 24644431921     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.601742     Document Type: Conference Paper

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