Surface smoothness of polycrystalline copper after ion irradiation

Vacuum

Volumn 74, Issue 3-4 SPEC. ISS., 2004, Pages 479-484

  Yamauchi, Y ^a   Taguchi, T ^a   Hirohata, Y ^a   Hino, T ^a   Nishikawa, M ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b Research Group of Science Solutions International Laboratory Inc   (Japan)

Author keywords

AFM; Cu wire; Ion etching; SEM; Surface smoothness

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; COPPER; ETCHING; IRON; MOLECULAR WEIGHT; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SURFACE ROUGHNESS; SYNTHESIS (CHEMICAL);

CU WIRE; ION ETCHING; ION IRRADIATION; SURFACE SMOOTHNESS;

POLYCRYSTALLINE MATERIALS;

EID: 2442653092     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.01.017     Document Type: Article

References (20)

1. Maeda K.VLSI and CVD. Tokyo: Makisyoten; 1997. p. 245 [in Japanese].
2. Doi T. Details of semiconductor CMP technology. Tokyo: Kogyo Chosakai; 2001. p. 35 [in Japanese].
3. For example, Kao Y, Yu C, Shen S. Microelectron Eng 2003;65:61-5.
4. Yamauchi T., Tokura S., Yamanaka S., Miyake M. J Nucl Mater. 155-157:1988;438-442.
5. Whitton J.L., Rao A.S., Kaminsky M. J Nucl Mater. 152:1988;278-282.
6. Guseva MI, Ivanov SM, Martynenko YuV. J Nucl Mater 1981;96:208-211.
7. Terreault B. J Nucl Mater. 93&94:1980;707-712.
8. Yamauchi Y., Hirohata Y., Hino T. J Nucl Mater. 313-316:2003;408-412.
9. Fukahori T., Kanda Y., Mori K., Tobimatsu H. J Nucl Mater. 133&134:1985;277-279.
10. Moreno D., Elliezer D. J Mater Sci Lett. 13:1994;1591-1593.
11. Brooks W.S., Meyer E., Donnelly S.E., Vishnyakov V., Valizadeh R., Templier C., Birtcher R. J Nucl Mater. 206:1993;107-110.
12. EerNisse E.P., Picraux S.T. J Appl Phys. 48:1977;9-17.
13. Moreno D., Eliezer D. Metall Mater Trans A. 28A:1997;755-762.
14. Bohdansky J. J Nucl Mater. 93&94:1980;44-60.
15. Roth J., Bohdansky J., Ottenberger W. J Nucl Mater. 165:1989;193-198.
16. Bandourko V., Jimbou R., Nakamura K., Akiba M. J Nucl Mater. 258-263:1998;917-920.
17. Jisheng P., Zhenxia W., Jiping Z., Zhenlan T. J Mater Sci Lett. 13:1994;1132-1135.
18. Shimizu R. Jap J Appl Phys. 13:1974;228-233.
19. Kowalski Z.W. J Mater Sci. 19:1984;2845-2854.
20. Küstner M., Eckstein W., Dose V., Roth J Nucl Instrum Methods B. 145:1998;320-331.