Mechanisms of blue and red luminescence of GaN film

Guangxue Xuebao/Acta Optica Sinica

Volumn 23, Issue 12, 2003, Pages 1493-1496

  Lai, Tianshu ^a   Wang, Jiahui ^a   Zhang, Lili ^a   Lin, Weizhu ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

Absorption normalized photoluminescent excitation spectroscopy; Blue and red luminescence; Emission mechanism; Gallium nitride; Luminescence; Photoluminescence; Semiconducting film

Indexed keywords

ELECTRON ENERGY LEVELS; GALLIUM NITRIDE; LIGHT ABSORPTION; LIGHT EMISSION; LUMINESCENCE; PHOTOLUMINESCENCE;

BLUE LUMINESCENCE; PHOTOLUMINESCENT EXCITATION SPECTROSCOPY; RED LUMINESCENCE;

SEMICONDUCTING FILMS;

EID: 2442648003     PISSN: 02532239     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. Lai Tianshu, Lin Weizhu, Mo Dang.. Determination of yellow photoluminescence model in undoped GaN. Acta Phys. Sin., 2002, 51(5): 1149-1152 (in Chinese)
2. Ogino T, Aoki M. Mechanism of yellow luminescence in GaN. Jpn. J. Appl. Phys., 1980, 19(12): 2395-2405.
3. Hofmann D M, Kovalev D, Steude G et al.. Properties of yellow luminescence in undoped GaN epitaxial layers., Phys. Rev. (B), 1995, 52(23): 16702-16706.
4. Reynolds D C, Look D C, Jogai B et al.. Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO. Solid State Commun., 1998, 106(10): 701-704.
5. Neugebauer J, van de Walle C G. Gallium vacancies and the yellow luminescence in GaN. Appl. Phys. Lett., 1996, 69(4): 503-505.
6. Glaser E R, Kennedy T A, Doverspike K et al.. Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition. Phys. Rev. (B), 1995, 51(19): 13326-13336.
7. Xu H Z, Bell A, Wang Z G et al.. Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate. J. Crystal Growth, 2001, 222: 96-103.
8. Li Shuti, Wang Li, Xin Yong et al. . Blue luminescence in unintentionally doped GaN grown by MOCVD. Chin. J. Luminescence, 2000, 21(1): 29-32.
9. Li Xin, Peng Linfeng, Huang Qiwen et al.. Studies of blue emission of n-type GaN. Acta Scientiarum Naturalium Universitatis Sunyatseni, 2002, 41(1): 105-106 (in Chinese)
10. Schubert E F, Goepfert I D, Redwing J M. Evidence of compensating centers as origin of yellow luminescence in GaN. Appl. Phys. Lett., 1997, 71(22): 3224-3226.
11. Schon O, Schineller B, Heuken M et al.. Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN. J. Crystal Growth, 1998, 189/190: 335-339.
12. Chichibu S F, Torii K, Deguchi T et al.. Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth. Appl. Phys. Lett., 2000, 76(12): 1576-1578.