Interface formation between Cu-phthalocyanine films and CdS and GaAs semiconductor surfaces

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Volumn 239, Issue 1-3, 2004, Pages 49-54

  Komolov, Alexei ^a,b   Møller, Preben J ^b  

^a ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

Condensed matter; Cu phthalocyanine; Electron solid scattering and transmission elastic; Electronic properties; Semiconductor organic semiconductor interfaces; Silicon; Silicon oxide; Surface chemical reaction; Surface electronic phenomena

Indexed keywords

ARSENIC COMPOUNDS; AUGER ELECTRON SPECTROSCOPY; CHARGE TRANSFER; DEPOSITION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM;

CU-PHTHALOCYANINE FILMS; FILM THICKNESS; ORGANIC SEMICONDUCTOR FILMS; TOTAL CURRENT ELECTRON SPECTROSCOPY (TCS);

THIN FILMS;

ARSENIC; CADMIUM DERIVATIVE; COPPER DERIVATIVE; GALLIUM; PHTHALOCYANINE; SULFUR DERIVATIVE;

ATOMIC PARTICLE; AUGER ELECTRON SPECTROSCOPY; CHEMICAL COMPOSITION; CHEMICAL INTERACTION; CHEMICAL STRUCTURE; CONFERENCE PAPER; ELECTRIC POTENTIAL; ELECTRICITY; ELECTRON; ELECTRONICS; ENERGY; FILM; HEAT; MATERIAL STATE; MOLECULE; PRIORITY JOURNAL; SEMICONDUCTOR; SPECTROSCOPY; SURFACE PROPERTY; SYNTHESIS; THICKNESS; TOTAL CURRENT ELECTRON SPECTROSCOPY;

EID: 2442635372     PISSN: 09277757     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.colsurfa.2003.12.026     Document Type: Conference Paper

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