Proposal of N-channel heterostructure dynamic threshold-voltage MOSFET (HDTMOS) with P-type doped SiGe body

Device Research Conference - Conference Digest, DRC

Volumn 2002-January, Issue , 2002, Pages 51-52

  Kawashima, T ^a   Takagi, T ^a   Hara, Y ^a   Kanzawa, Y ^a   Inoue, A ^a   Sorada, H ^a   Nozawa, K ^a   Asai, A ^a   Ohnishi, T ^a   Kubo, M ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Application specific integrated circuits; Body regions; Doping; Germanium silicon alloys; Heterojunctions; MOSFET circuits; Power MOSFET; Proposals; Silicon germanium; Threshold voltage

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; BICMOS TECHNOLOGY; DOPING (ADDITIVES); GERMANIUM; GERMANIUM ALLOYS; LOW POWER ELECTRONICS; MOSFET DEVICES; SILICON ALLOYS; THRESHOLD VOLTAGE;

BODY REGIONS; GERMANIUM SILICON ALLOY; MOSFET CIRCUITS; POWER MOSFET; PROPOSALS; SILICON GERMANIUM;

HETEROJUNCTIONS;

EID: 84948685463     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2002.1029502     Document Type: Conference Paper

References (4)

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2. T. Hiramoto et. al., IEICE Trans. Electron. E83-C (2000) 161.
3. T. Takagi et. al., IEEE Electron Device Letters 22 (2001) 206.
4. T. Hirose et. al., IEDM Tech. Dig., (2001) 943.