Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N

Journal of Electronic Materials

Volumn 33, Issue 5, 2004, Pages 418-421

  Wang, J H ^a   Mohney, S E ^a   Wang, S H ^a   Chowdhury, U ^b   Dupuis, R D ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

AlGaN; Ohmic contacts; V Al Pd Au; V Al V Au

Indexed keywords

ANNEALING; DEPOSITION; EVAPORATION; GOLD; OHMIC CONTACTS; PALLADIUM; PHOTOLITHOGRAPHY; VANADIUM;

ALGAN; CONTACT RESISTANCE; V/AL/PD/AU; V/AL/V/AU;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 2442576047     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0194-7     Document Type: Conference Paper

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