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Volumn 13, Issue 4-8, 2004, Pages 557-560

High growth rate MWPECVD of single crystal diamond

Author keywords

Growth rate; Homoepitaxial growth; Single crystal diamond

Indexed keywords

CONTAMINATION; CRYSTAL GROWTH; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SINGLE CRYSTALS;

EID: 2442532919     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.01.023     Document Type: Article
Times cited : (28)

References (13)
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  • 2
    • 21544465526 scopus 로고
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    • Landstrass M.I. Ravi K.V. Hydrogen passivation of electrically active defects in diamond Appl. Phys. Lett. 55 14 1989 1391-1393
    • (1989) Appl. Phys. Lett. , vol.55 , Issue.14 , pp. 1391-1393
    • Landstrass, M.I.1    Ravi, K.V.2
  • 3
    • 0030395822 scopus 로고    scopus 로고
    • Hydrogen-terminated diamond surfaces and interfaces
    • Kawarada H. Hydrogen-terminated diamond surfaces and interfaces Surf. Sci. Rep. 26 7 1996 205-259
    • (1996) Surf. Sci. Rep. , vol.26 , Issue.7 , pp. 205-259
    • Kawarada, H.1
  • 4
    • 0035270081 scopus 로고    scopus 로고
    • The correlation between surface conductivity and adsorbate coverage on diamond as studied by infrared spectroscopy
    • Mantel B.F. Stammler M. Ristein J. Ley L. The correlation between surface conductivity and adsorbate coverage on diamond as studied by infrared spectroscopy Diamond Relat. Mater. 10 3-7 2001 429-433
    • (2001) Diamond Relat. Mater. , vol.10 , Issue.3-7 , pp. 429-433
    • Mantel, B.F.1    Stammler, M.2    Ristein, J.3    Ley, L.4
  • 8
    • 0030506552 scopus 로고    scopus 로고
    • Cleaning thin-film diamond surfaces for device fabrication: An auger electron spectroscopic study
    • Baral B. Chan S. Jackman R. Cleaning thin-film diamond surfaces for device fabrication: an auger electron spectroscopic study J. Vac. Sci. Technol. 14 1996 2303
    • (1996) J. Vac. Sci. Technol. , vol.14 , pp. 2303
    • Baral, B.1    Chan, S.2    Jackman, R.3
  • 11
    • 0037338736 scopus 로고    scopus 로고
    • Surface conductivity on hydrogen terminated diamond
    • Williams O.A. Jackman R.B. Surface conductivity on hydrogen terminated diamond Semicond. Sci. Technol. 18 3 2003 S34-S40
    • (2003) Semicond. Sci. Technol. , vol.18 , Issue.3
    • Williams, O.A.1    Jackman, R.B.2
  • 12
    • 0012605533 scopus 로고    scopus 로고
    • Nitrogen induced increase of growth rate in chemical vapor deposition of diamond
    • MullerSebert W. Worner E. Fuchs F. Wild C. Koidl P. Nitrogen induced increase of growth rate in chemical vapor deposition of diamond Appl. Phys. Lett. 68 6 1996 759-760
    • (1996) Appl. Phys. Lett. , vol.68 , Issue.6 , pp. 759-760
    • MullerSebert, W.1    Worner, E.2    Fuchs, F.3    Wild, C.4    Koidl, P.5
  • 13
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    • Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet
    • Guo H. Sun Z.L. He Q.Y. Du S.M. Wu X.B. Wang Z.N.et al. Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet Diamond Relat. Mater. 9 9-10 2000 1673-1677
    • (2000) Diamond Relat. Mater. , vol.9 , Issue.9-10 , pp. 1673-1677
    • Guo, H.1    Sun, Z.L.2    He, Q.Y.3    Du, S.M.4    Wu, X.B.5    Wang, Z.N.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.