Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet

Diamond and Related Materials

Volumn 9, Issue 9, 2000, Pages 1673-1677

  Guo, H ^a   Sun, Z L ^a   He, Q Y ^a   Du, S M ^a   Wu, X B ^a   Wang, Z N ^a   Liu, X J ^a   Cai, Y H ^a   Diao, X G ^a   Li, G H ^a   Tang, W Z ^b   Zhong, G F ^b   Huang, T B ^b   Liu, J M ^b   Jiang, Z ^b   Lu, F X ^b  

^a INSTITUTE OF ENERGY RESOURCES   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; METHANE; PLASMA JETS; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS;

DIAMOND WAFERS; FLOW RATE; GAS RECYCLING MODE; SUBSTRATE TEMPERATURE;

DIAMOND FILMS;

EID: 0034273476     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00289-2     Document Type: Article

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