N2-plasma-nitridation effects on porous silicon

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 568-571

  Yokomichi, Haruo ^a   Masuda, Atsushi ^b,d   Yonezawa, Yasuto ^b,c   Shimizu, Tatsuo ^b  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

^c INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

^d JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Photoluminescence; Plasma nitridation; Porous silicon

Indexed keywords

ANODIC OXIDATION; CHEMICAL BONDS; NITROGEN; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SILICON WAFERS; SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANODIZATION; PLASMA NITRIDATION;

POROUS SILICON;

EID: 0030217788     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08717-2     Document Type: Article

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