Nanoscale electrical characterization of trap-assisted quasibreakdown fluctuations in SiO2

Applied Physics Letters

Volumn 84, Issue 16, 2004, Pages 3142-3144

  Pakes, C I ^a   Ramelow, S ^a   Prawer, S ^a   Jamieson, D N ^a  

^a UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; FERMI LEVEL; MATHEMATICAL MODELS; MOS DEVICES; PROBABILITY; SCANNING TUNNELING MICROSCOPY; SILICA; THIN FILMS; TUNNEL JUNCTIONS;

CHARGE TRAPPING; CONDUCTIVE ATOMIC FORCE MICROSCOPY (CAFM); LOCAL CURRENT-VOLTAGE SPECTROSCOPY; QUASIBREAKDOWN FLUCTUATIONS; TRAP-ASSISTED TUNNELING;

SEMICONDUCTING FILMS;

EID: 2442528219     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1712033     Document Type: Article

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