Vertically self-aligned buried junction formation for ultrahigh-density DRAM applications

IEEE Electron Device Letters

Volumn 25, Issue 5, 2004, Pages 259-261

  Beintner, J ^a   Li, Y ^b   Knorr, A ^c   Chidambarrao, D ^b   Voigt, P ^d   Divakaruni, R ^b   Pochmuller P ^d   Bronner, G ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

^c INFINEON TECHNOLOGIES   (United States)

^d INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Dynamic random access memory (DRAM); Floating body effect; Retention time; Shallow junctions; Solid phase diffusion (SPD); Vertical transistor

Indexed keywords

DIFFUSION; ELECTRIC FIELD EFFECTS; OPTIMIZATION; SEMICONDUCTOR JUNCTIONS;

ULTRAHIGH DENSITY; VERTICALLY SELF ALIGNED BURIED JUNCTION;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 2442516386     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.826512     Document Type: Letter

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